Trapping in proton irradiated p+-n-n+ silicon sensors at fluences anticipated at the HL-LHC outer tracker
Yazarlar (150)
Wolfgang Adam
T Bergauer
M Dragicevic
M Friedl
R Fruehwirth
M Hoch
J Hrubec
M Krammer
W Treberspurg
W Waltenberger
S Alderweireldt
W Beaumont
X Janssen
S Luyckx
P Van Mechelen
N Van Remortel
A Van Spilbeeck
P Barria
C Caillol
B Clerbaux
G De Lentdecker
D Dobur
L Favart
A Grebenyuk
Th Lenzi
A Léonard
Th Maerschalk
A Mohammadi
L Perniè
A Randle-Conde
T Reis
T Seva
L Thomas
C Vander Velde
P Vanlaer
J Wang
F Zenoni
S Abu Zeid
F Blekman
I De Bruyn
J d'Hondt
N Daci
K Deroover
N Heracleous
J Keaveney
S Lowette
L Moreels
A Olbrechts
Q Python
S Tavernier
P Van Mulders
G Van Onsem
I Van Parijs
DA Strom
S Basegmez
G Bruno
R Castello
A Caudron
L Ceard
B De Callatay
C Delaere
T Du Pree
L Forthomme
A Giammanco
J Hollar
P Jez
D Michotte
C Nuttens
L Perrini
D Pagano
L Quertenmont
M Selvaggi
M Vidal Marono
N Beliy
T Caebergs
E Daubie
GH Hammad
J Härkönen
T Lampén
P-R Luukka
T Mäenpää
T Peltola
E Tuominen
E Tuovinen
P Eerola
T Tuuva
G Beaulieu
G Boudoul
C Combaret
D Contardo
G Gallbit
N Lumb
H Mathez
L Mirabito
S Perries
D Sabes
M Vander Donckt
P Verdier
S Viret
Y Zoccarato
J-L Agram
E Conte
J-Ch Fontaine
J Andrea
D Bloch
C Bonnin
J-M Brom
E Chabert
L Charles
Ch Goetzmann
L Gross
J Hosselet
C Mathieu
M Richer
K Skovpen
C Pistone
G Fluegge
A Kuensken
M Geisler
O Pooth
C Autermann
M Edelhoff
H Esser
L Feld
W Karpinski
K Klein
M Lipinski
A Ostapchuk
G Pierschel
M Preuten
F Raupach
J Sammet
S Schael
G Schwering
B Wittmer
M Wlochal
V Zhukov
N Bartosik
J Behr
A Burgmeier
L Calligaris
G Dolinska
G Eckerlin
D Eckstein
T Eichhorn
G Fluke
J Garay Garcia
A Gizhko
K Hansen
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Instrumentation (Q2) | ||
| Makale Dili | – | Basım Tarihi | 04-2016 |
| Cilt / Sayı / Sayfa | 11 / 4 / – | DOI | 10.1088/1748-0221/11/04/P04023/meta |
| Makale Linki | https://iopscience.iop.org/article/10.1088/1748-0221/11/04/P04023/meta | ||
| UAK Araştırma Alanları |
Nükleer Fizik
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| Özet |
| The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 · 1015 neq/cm2. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses … |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Google Scholar | 19 |