Comparison of radiation damage parameter values for the widely used semiconductor gamma detector materials in wide energy range
Yazarlar (2)
Prof. Dr. Turgay KORKUT Sinop Üniversitesi, Türkiye
Hatun Korkut Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | RADIATION PHYSICS AND CHEMISTRY (Q1) | ||
| Dergi ISSN | 0969-806X Dergi Bilgileri (2014) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 04-2014 |
| Cilt / Sayı / Sayfa | 97 / 0 / 337–340 | DOI | 10.1016/j.radphyschem.2013.12.031 |
| Makale Linki | http://www.scopus.com/inward/record.url?eid=2-s2.0-84892656332&partnerID=MN8TOARS | ||
| UAK Araştırma Alanları |
Mühendislik
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| Özet |
| Number of displaced atoms (NDA) values for 3 different semiconductor detector materials (Ge, Si, and GaAs) was reviewed at 26 different primary energies emitted from 9 radiation sources (241Am, 133Ba, 109Cd, 57Co, 60Co, 137Cs, 152Eu, 55Fe and 153Gd) widely used in the literature. FLUKA Monte Carlo code was used to simulate interactions between X–gamma rays and semiconductor detector materials. Germanium has the highest average NDA value in the studied three semiconductors. |
| Anahtar Kelimeler |
| DPA | Radiation damage | Semiconductor detector | FLUKA Monte Carlo code |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 4 |
| Google Scholar | 4 |