Responses of Pt n InP Schottky diode to electron irradiation in different temperature conditions
Yazarlar (5)
Atakan Akbay
Hatun Korkut Sinop Üniversitesi, Türkiye
Abdülmecit Türüt
Prof. Dr. Turgay KORKUT Ağrı İbrahim Çeçen Üniversitesi, Türkiye
Prof. Dr. Kadir Ejderha Bingöl Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY (Q1) | ||
| Dergi ISSN | 0236-5731 Dergi Bilgileri (2011) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 07-2011 |
| Cilt / Sayı / Sayfa | 289 / 1 / 145–148 | DOI | 10.1007/s10967-011-1041-y |
| Makale Linki | http://link.springer.com/10.1007/s10967-011-1041-y | ||
| UAK Araştırma Alanları |
Nükleer Fizik
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| Özet |
| Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I–V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation. |
| Anahtar Kelimeler |
| Pt/n-InP Schottky diodes | Magnetron sputtering | Electron irradiation | Reverse bias current voltage characteristics | Schottky barrier height | Low temperature applications |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 10 |
| Google Scholar | 15 |