Electrical Properties of n-CdOp-Si Heterojunction Diode Fabricated by Sol Gel
Yazarlar (2)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Eskişehir Teknik Üniversitesi, Türkiye
| Bildiri Türü | Tebliğ/Bildiri | Bildiri Dili | İngilizce |
| Bildiri Alt Türü | Tam Metin Olarak Yayınlanan Tebliğ (Uluslararası Kongre/Sempozyum) | ||
| Bildiri Niteliği | Alanında Hakemli Uluslararası Kongre/Sempozyum | ||
| Kongre Adı | International Conference on Materials Science and Engineering (ICMSE 2011) (WASET) | ||
| Kongre Tarihi | 22-02-2011 / | ||
| Basıldığı Ülke | İtalya | Basıldığı Şehir | |
| Bildiri Linki | https://publications.waset.org/3261/electrical-properties-of-n-cdop-si-heterojunction-diode-fabricated-by-sol-gel | ||
| UAK Araştırma Alanları |
Yoğun Madde Fiziği
Yarı İletkenler
Malzeme Fiziği
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| Özet |
| n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm− 2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92× 10− 9 A. |
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