FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS
Yazarlar (1)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
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Özgün Makale
(Ulusal alan endekslerinde (TR Dizin, ULAKBİM) yayınlanan tam makale)
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| Dergi Adı | Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering | ||
| Dergi ISSN | 2667-4211 | ||
| Dergi Tarandığı Indeksler | TR DİZİN | ||
| Makale Dili | İngilizce | Basım Tarihi | 09-2019 |
| Cilt / Sayı / Sayfa | – / 3 / 296–306 | DOI | 10.18038/estubtda.506606 |
| Makale Linki | http://dx.doi.org/10.18038/estubtda.506606 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopant by the sol gel spin coating method. Morphological properties of the films were studied by emission scanning electron microscopy (FESEM). Then, the n-ZnO:Mn/p-Si heterojunction diodes were fabricated. The diode parameters were determined by current-voltage (I-V) measurements. The values of the diodes were found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn doped ZnO films. At the same time, electrical parameters were determined to compare by using Cheung and Norde methods. According to the evaluation of values obtained by different methods, an improvement on the rectifying properties of the ZnO diode with Mn dopant has been observed. In the continuation of the study, the photovoltaic properties of the heterojunction diodes have been studied. The results obtained at different illumination intensities showed that the diodes are sensitive to light. Capacitance-voltage (C-V) measurements of the fabricated diodes are also investigated in detail. |
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BM Sürdürülebilir Kalkınma Amaçları
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| Google Scholar | 7 |