Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations
Yazarlar (1)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Physica B Condensed Matter (Q2) | ||
| Dergi ISSN | 0921-4526 Dergi Bilgileri (2021) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 02-2021 |
| Cilt / Sayı / Sayfa | 603 / 1 / – | DOI | 10.1016/j.physb.2020.412482 |
| Makale Linki | http://dx.doi.org/10.1016/j.physb.2020.412482 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| The present study includes the results of a series of studies on the appropriateness of their use as photodiodes after investigating some of the physical properties of Zn doped NiO films by the sol-gel spin coating technique. The morphological properties of the films were examined and it was determined that the Zn additive provides the formation of smoother films. The T% and E g value of the films decreased with the Zn dopant. I− V measurements have shown that all films are light sensitive. The ideality factors of the photodiodes were calculated and the lowest ideality factor was reported as 4.31 for the p− S i/n− N i O: 0.5% Z n/A l photodiode. The photosensitivity of photodiodes was investigated and it was determined that they exhibit linear photoconductivity behavior. The highest R R value was observed at p− S i/n− N i O: 0.5% Z n/A l photodiode among all photodiodes. The barrier height of photodiodes was … |
| Anahtar Kelimeler |
| Current/capacitance voltage measurements | Nickel oxide | Photodiode | Sol-gel | Zinc |
Science Direct
Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 12 |
| Google Scholar | 15 |