Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters
Yazarlar (5)
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
Prof. Dr. Müjdat Çağlar Anadolu Üniversitesi, Türkiye
Saliha Ilıcan
Anadolu Üniversitesi, Türkiye
Anadolu Üniversitesi, Türkiye
Prof. Dr. Kamuran Görgün Eskişehir Osmangazi Üniversitesi, Türkiye
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | JOURNAL OF MOLECULAR STRUCTURE (Q3) | ||
| Dergi ISSN | 0022-2860 Dergi Bilgileri (2018) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 03-2018 |
| Cilt / Sayı / Sayfa | 1156 / 0 / 675–683 | DOI | 10.1016/j.molstruc.2017.11.121 |
| Makale Linki | http://dx.doi.org/10.1016/j.molstruc.2017.11.121 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current–voltage (I–V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I–V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance–voltage (C–V … |
| Anahtar Kelimeler |
| Al doped ZnO films | Microwave assisted chemical bath | deposition | Heterojunction diode | Hexagonal rods |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 35 |
| Google Scholar | 44 |