XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions
Yazarlar (4)
Saliha Ilıcan
Anadolu Üniversitesi, Türkiye
Anadolu Üniversitesi, Türkiye
Prof. Dr. Müjdat Çağlar Anadolu Üniversitesi, Türkiye
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | JOURNAL OF NANOMATERIALS (Q2) | ||
| Dergi ISSN | 1687-4110 Dergi Bilgileri (2016) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2016 |
| Cilt / Sayı / Sayfa | 2016 / 1 / 6729032–0 | DOI | 10.1155/2016/6729032 |
| Makale Linki | http://dx.doi.org/10.1155/2016/6729032 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| The chemical composition of the electrodeposited undoped and F‐doped ZnO (FZN) rods was investigated by X‐ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. The p-Si/n-ZnO and p-Si/n-FZN heterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (ϕB), and series resistance (Rs) which were calculated from the current‐voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method. There is a good agreement between the diode parameters obtained from different methods. |
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BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 22 |
| Google Scholar | 27 |