Influence of Annealing Temperature on the Structural and Optical Characteristics of Nanostructure SnO2 Films and Their Applications in Heterojunction Diode
Yazarlar (4)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
Prof. Dr. Müjdat Çağlar Anadolu Üniversitesi, Türkiye
Saliha Ilıcan
Anadolu Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS (Q4)
Dergi ISSN 1555-130X Dergi Bilgileri (2016)
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 02-2016
Cilt / Sayı / Sayfa 11 / 1 / 115–121 DOI 10.1166/jno.2016.1885
Makale Linki http://openurl.ingenta.com/content/xref?genre=articleissn=1555-130Xvolume=11issue=1spage=115
UAK Araştırma Alanları
Yarı İletkenler
Özet
In present study, sol gel spin coating method was used to fabricate the nanostructure SnO2 films using the tin(II) acetate solutions. The solutions were spin coated on p-Si substrates and the obtained films was annealed at different temperatures. To investigate the influence of the annealing temperature of n-SnO2 films, the structural and microstructural properties were performed using X-ray diffraction (XRD) and field emission scanning electron microscopy (SEM), respectively. XRD results showed that the average crystallite size of the films was increased with increasing annealing temperature. It is seen that the surface morphology of nanostructure SnO2 films are almost homogeneous and particle size values of the films are approximately 10 nm. In addition, the pn heterojunction diode was fabricated by depositing SnO2 film at 600 °C on p-Si substrates. The electrical properties of the n-SnO2/p-Si diode were …
Anahtar Kelimeler
Nanostructure | SnO2 Films | Sol Gel Spin Coating | Annealing Effect | Heterojunction Diode | Ideality Factor | Kubelka-Munk