Effect of the Deposition Temperature on the Device Performance of the Nanostructured ZnO Thin Film Transistor by Sol Gel Method
Yazarlar (7)
Doç. Dr. Şerif Rüzgar Batman Üniversitesi, Türkiye
Aziz Ertuğrul Özkan
Prof. Dr. Müjdat Çağlar Anadolu Üniversitesi, Türkiye
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Saliha Ilıcan
Anadolu Üniversitesi, Türkiye
Anadolu Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
Prof. Dr. Fahrettin Yakuphanoğlu Fırat Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS (Q4) | ||
| Dergi ISSN | 1555-130X Dergi Bilgileri (2014) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2014 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-10-2014 |
| Cilt / Sayı / Sayfa | 9 / 5 / 689–693 | DOI | 10.1166/jno.2014.1657 |
| Makale Linki | http://dx.doi.org/10.1166/jno.2014.1657 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| In this study, the nanostructured ZnO thin film transistors (TFTs) were fabricated by using sol–gel spin-coating method and the deposition temperature effect on the structural and morphological properties of active layer ZnO TFTs were investigated. The crystallinity of active layer was improved with deposition temperature. An increase in the crystallite size depending on the increase in deposition temperature was observed in both scanning electron microscopy (SEM) micrographs and X-ray diffraction (XRD) results. The prepared TFTs exhibited the n-channel behavior due to the n-type electrical conductivity of the ZnO active layer. The saturation mobility that is one of the important parameters of transistor was significantly affected by the deposition temperature and reached 5.28 cm2 V–1 s–1 at 750 °C. |
| Anahtar Kelimeler |
| ZnO | Sol-Gel Spin Coating Method | Thin Film Transistor |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 8 |
| Google Scholar | 9 |