Structural transformations of TiO2 films with deposition temperature and electrical properties of nanostructure n-TiO2/p-Si heterojunction diode
Yazarlar (2)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | JOURNAL OF ALLOYS AND COMPOUNDS (Q1) | ||
| Dergi ISSN | 0925-8388 Dergi Bilgileri (2014) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 11-2014 |
| Cilt / Sayı / Sayfa | 613 / 0 / 330–337 | DOI | 10.1016/j.jallcom.2014.05.192 |
| Makale Linki | http://dx.doi.org/10.1016/j.jallcom.2014.05.192 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| Titanium oxide (TiO2) films have been deposited on p-Si substrates by sol–gel method using spin coating technique. Structural and morphological properties were studied as a function of deposition temperatures by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The deposition temperatures were chosen from 700 °C to 1100 °C. Crystallization of the anatase phase and its transformation to the rutile phase were observed at 700 °C and 800 °C, respectively. The fabrication of nanostructure n-TiO2/p-Si heterojunction diode was formed by using T7 film deposited at 700 °C. The electrical parameters such as barrier height (ϕb) and ideality factor (n) of nanostructure n-TiO2/p-Si heterojunction diode were investigated by using I–V measurements and observed to be 0.58 eV and 5.39, respectively. Also, the values of ϕb and series resistance (Rs) were determined by using Cheung’s … |
| Anahtar Kelimeler |
| TiO2 film | Sol gel spin coating | Nanostructure | Ideality factor | Conduction mechanism |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 86 |
| Google Scholar | 107 |