Effect of ambient temperature on electrical properties of nanostructure n ZnO p Si heterojunction diode
Yazarlar (2)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | SUPERLATTICES AND MICROSTRUCTURES (Q2) | ||
| Dergi ISSN | 0749-6036 Dergi Bilgileri (2012) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 05-2012 |
| Cilt / Sayı / Sayfa | 51 / 5 / 613–625 | DOI | 10.1016/j.spmi.2012.02.018 |
| Makale Linki | http://linkinghub.elsevier.com/retrieve/pii/S0749603612000596 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| The nanostructure n-ZnO/p-Si heterojunction diode was fabricated by sol–gel method. The structural and morphological properties of the nanostructure ZnO film have been investigated. The X-ray diffraction spectra indicated that the films are of polycrystalline nature. The scanning electron microscopy images indicate that the surface morphology of ZnO film is almost homogeneous and the ZnO film is consisted of the circular formed with coming together of the nanoparticles. The electrical characterization of nanostructure n-ZnO/p-Si heterojunction diode has been investigated by current–voltage characteristics. The ideality factor (n) of the diode was found for different ambient temperatures and the obtained 6.40 value for 296K is higher than unity due to the interface states between the two semiconductor materials and series resistance. The values of n increased with decreasing ambient temperature. The reverse … |
| Anahtar Kelimeler |
| ZnO | Nanostructure | Sol-gel | Heterojunction semiconductor diode | Current-voltage characteristics | Ideality factor |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 56 |
| Google Scholar | 79 |