Effect of Sn dopants on the optical and electrical properties of ZnOfilms
Yazarlar (4)
Doç. Dr. Seval AKSOY PEHLİVANOĞLU Sinop Üniversitesi, Türkiye
Prof. Dr. Yasemin Çağlar Anadolu Üniversitesi, Türkiye
Saliha Ilıcan
Anadolu Üniversitesi, Türkiye
Prof. Dr. Müjdat Çağlar Anadolu Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı OPTICA APPLICATA (Q4)
Dergi ISSN 0078-5466 Dergi Bilgileri (2010)
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 01-2010
Cilt / Sayı / Sayfa 40 / 1 / 7–14 DOI
UAK Araştırma Alanları
Yarı İletkenler
Özet
The undoped and tin (Sn) doped ZnO films were deposited by a spray pyrolysis method onto the glass substrates. 0.2 M solution of zinc acetate in a mixture of ethanol and deionised water, in a volume proportion of 3: 1, was employed. Dopant source was tin chloride. The atomic percentage of dopant in solution were Sn/Zn= 1%, 3% and 5%. The effect of tin doping on the optical and electrical properties of ZnO films was studied. The optical transmittance was about 76% in a visible range for Sn-doped ZnO films. The optical band gaps of the films were calculated. This suggests that the absorption edge shifts to the lower wavelengths with Sn dopant. Optical constants of the films were determined. These parameters changed with Sn dopant.
Anahtar Kelimeler
ZnO film | optical band gap | optical constant | figure of merit
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Web of Science 49
Google Scholar 74

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