Fabrication and characterization of graphene AlGaN GaN ultraviolet Schottky photodetector
Yazarlar (5)
M. Kumar
Konkuk University, Güney Kore
H. Jeong Konkuk University, Güney Kore
Prof. Dr. Kinyas POLAT Bilkent Üniversitesi, Türkiye
A. K. Okyay
Bilkent Üniversitesi, Türkiye
D. Lee
Konkuk University, Güney Kore
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Journal of Physics D Applied Physics (Q2)
Dergi ISSN 0022-3727 Dergi Bilgileri (2016)
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce Basım Tarihi 07-2016
Kabul Tarihi Yayınlanma Tarihi 09-06-2016
Cilt / Sayı / Sayfa 49 / 27 / 275105–0 DOI 10.1088/0022-3727/49/27/275105
Makale Linki http://stacks.iop.org/0022-3727/49/i=27/a=275105?key=crossref.6ba329dd4937441f72f0206db5611866
UAK Araştırma Alanları
Fiziksel Kimya
Özet
We report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is formed between the AlGaN and the mechanically transferred graphene. The Schottky parameters are evaluated using an equivalent circuit with two diodes connected back-to-back in series. The PD shows a low dark current of 4.77  ×  10−12 A at a bias voltage of  −2.5 V. The room temperature current–voltage (I–V) measurements of the graphene/AlGaN/GaN Schottky PD exhibit a large photo-to-dark contrast ratio of more than four orders of magnitude. Furthermore, the device shows peak responsivity at a wavelength of 350 nm, corresponding to GaN band edge and a small hump at 300 nm associated to the AlGaN band edge. In addition, we examine the behaviour of Schottky PDs with …
Anahtar Kelimeler
AlGaN | GaN | grapheme | photodetector | Schottky contact
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Web of Science 31
Scopus 31
Google Scholar 34
Fabrication and characterization of graphene AlGaN GaN ultraviolet Schottky photodetector

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