Metal semiconductor metal UV photodetector based on Ga doped ZnO graphene interface
Yazarlar (5)
Manoj Kumar
Konkuk University, Güney Kore
Konkuk University, Güney Kore
Youngwook Noh
Konkuk University, Güney Kore
Konkuk University, Güney Kore
Prof. Dr. Kinyas POLAT Dokuz Eylül Üniversitesi, Türkiye
Ali Kemal Okyay
Bilkent Üniversitesi, Türkiye
Bilkent Üniversitesi, Türkiye
Dongjin Lee Konkuk University, Güney Kore
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Solid State Communications (Q2) | ||
| Dergi ISSN | 0038-1098 Dergi Bilgileri (2015) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 12-2015 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-12-2015 |
| Cilt / Sayı / Sayfa | 224 / 1 / 37–40 | DOI | 10.1016/j.ssc.2015.10.007 |
| Makale Linki | http://linkinghub.elsevier.com/retrieve/pii/S0038109815003610 | ||
| UAK Araştırma Alanları |
Fiziksel Kimya
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| Özet |
| Fabrication and characterization of metal–semiconductor–metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer. |
| Anahtar Kelimeler |
| A. Ga doped ZnO | A. Graphene | C. Metal-semiconductor-metal | D. Surface plasmon |
Science Direct
Metal semiconductor metal UV photodetector based on Ga doped ZnO graphene interface
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 19 |
| Scopus | 20 |
| Google Scholar | 24 |